NTD2955G
MOSFET P-CH 60V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD2955G is a P-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 60 V and a continuous drain current (Id) of 12A at 25°C (Ta). With a maximum on-resistance (Rds On) of 180mOhm at 6A and 10V, it ensures efficient power transfer. The NTD2955G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating compact board designs. Its maximum power dissipation is rated at 55W (Tj). Key parameters include a gate-source voltage (Vgs) tolerance of ±20V, a threshold voltage (Vgs(th)) of 4V at 250µA, input capacitance (Ciss) of 750pF at 25V, and gate charge (Qg) of 30nC at 10V. This component is suitable for use in industrial and automotive power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |
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