NTD2955-1G
MOSFET P-CH 60V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD2955-1G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 12A at 25°C. With a maximum power dissipation of 55W (Tj), it offers robust thermal performance. The Rds On is specified at a maximum of 180mOhm at 6A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 30 nC at 10V and Input Capacitance (Ciss) of 750 pF at 25V. The device operates within a temperature range of -55°C to 175°C (TJ). Housed in an IPAK (TO-251-3 Short Leads, TO-251AA) package for through-hole mounting, the NTD2955-1G is suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 180mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 750 pF @ 25 V |