NTD25P03LT4
MOSFET P-CH 30V 25A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD25P03LT4 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 30 V and a continuous drain current (Id) of 25 A at 25°C. The Rds On is specified at a maximum of 80 mOhm when driven at 25 A and a gate-source voltage (Vgs) of 5 V, with drive voltages ranging from 4 V to 5 V. The device offers a maximum power dissipation of 75 W at the junction temperature. Key characteristics include an input capacitance (Ciss) of 1260 pF at 25 V and a gate charge (Qg) of 20 nC at 5 V. The NTD25P03LT4 is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
