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NTD25P03LRLG

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NTD25P03LRLG

MOSFET P-CH 30V 25A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD25P03LRLG is a P-channel MOSFET designed for power management applications. This device features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) capability of 25 A at 25°C ambient temperature. The on-resistance (Rds On) is specified at a maximum of 80 mOhm when conducting 25 A with a 5 V gate-source voltage (Vgs). The NTD25P03LRLG offers a gate charge (Qg) of 20 nC at 5 V Vgs and an input capacitance (Ciss) of 1260 pF at 25 V Vds. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package for efficient thermal dissipation, with a maximum power dissipation of 75 W at the junction temperature (Tj). This component is suitable for use in automotive, industrial, and consumer electronics sectors. The device operates across a temperature range of -55°C to 150°C (Tj).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Rds On (Max) @ Id, Vgs80mOhm @ 25A, 5V
FET Feature-
Power Dissipation (Max)75W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1260 pF @ 25 V

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