NTD25P03L1G
MOSFET P-CH 30V 25A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD25P03L1G is a P-Channel MOSFET designed for power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) rating of 25A at 25°C ambient. The Rds(on) is specified at a maximum of 80mOhm when conducting 25A with a 5V gate-source voltage. The device offers a maximum power dissipation of 75W at the junction temperature. It utilizes a P-Channel Metal Oxide technology and has a typical Gate Charge (Qg) of 20 nC at 5V. The input capacitance (Ciss) is 1260 pF at 25V. The NTD25P03L1G is housed in an IPAK (TO-251AA) package with short leads, suitable for through-hole mounting. The operating temperature range is -55°C to 150°C (Tj). This component is commonly found in automotive, industrial, and power management systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 25A (Ta) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 25A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
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