NTD24N06T4G
MOSFET N-CH 60V 24A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD24N06T4G is a 60V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current capability of 24A at 25°C (Ta) and a low Rds(on) of 42mOhm at 10A, 10V. The TO-252-3, DPAK (SC-63) package facilitates efficient surface mounting. Key electrical parameters include a 48 nC gate charge and 1200 pF input capacitance, both specified at relevant drive voltages. With a maximum power dissipation of 1.36W (Ta) and 62.5W (Tj), this MOSFET is suitable for power management, automotive, and industrial control systems. The component operates within a temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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