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NTD24N06LG

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NTD24N06LG

MOSFET N-CH 60V 24A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD24N06LG is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) capability of 24A at 25°C ambient. The device exhibits a low on-resistance (Rds On) of 45mOhm maximum at 10A and 5V Vgs, contributing to reduced conduction losses. With a gate charge (Qg) of 32 nC maximum at 5V Vgs, it offers efficient switching characteristics. The NTD24N06LG is housed in a TO-252-3, DPAK surface mount package, suitable for automated assembly. Its operating temperature range is -55°C to 175°C (TJ). This MOSFET finds application in power supplies, motor control, and automotive electronics. The maximum power dissipation is rated at 1.36W (Ta) and 62.5W (Tj).

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 25 V

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