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NTD24N06L-1G

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NTD24N06L-1G

MOSFET N-CH 60V 24A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD24N06L-1G is an N-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-to-source voltage rating and a continuous drain current capability of 24A at 25°C ambient temperature. It offers a low on-resistance of 45mOhm maximum at 10A and 5V Vgs. The device is housed in a TO-251-3 Short Leads, IPAK package for through-hole mounting. Key electrical characteristics include a gate charge of 32 nC maximum at 5V Vgs and an input capacitance of 1140 pF maximum at 25V Vds. Power dissipation is rated at 1.36W ambient and 62.5W junction. The NTD24N06L-1G is suitable for use in various industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 25 V

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