NTD24N06L-001
MOSFET N-CH 60V 24A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD24N06L-001 is an N-Channel Power MOSFET featuring a 60 V drain-source breakdown voltage and a continuous drain current capability of 24 A at 25°C ambient. This device exhibits a low on-resistance of 45 mOhm maximum at 10 A and 5 V gate drive. The NTD24N06L-001 is designed for through-hole mounting in the IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA) and offers a maximum power dissipation of 1.36 W (ambient) or 62.5 W (junction). Key parameters include a gate charge of 32 nC typical at 5 V and an input capacitance of 1140 pF maximum. This MOSFET is suitable for applications in power management and general-purpose switching. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1140 pF @ 25 V |
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