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NTD24N06L

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NTD24N06L

MOSFET N-CH 60V 24A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD24N06L is an N-Channel Power MOSFET designed for efficient switching applications. This device features a 60 V Drain-to-Source voltage (Vdss) and a continuous drain current handling capability of 24 A at 25°C ambient temperature. With a maximum on-resistance (Rds On) of 45 mOhm at 10 A and 5 V gate-source voltage, it offers low conduction losses. The NTD24N06L utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Key parameters include a gate charge (Qg) of 32 nC at 5 V and input capacitance (Ciss) of 1140 pF at 25 V. This MOSFET operates within a temperature range of -55°C to 175°C (TJ) and has a maximum power dissipation of 1.36 W (Ta) or 62.5 W (Tj). The NTD24N06L is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Rds On (Max) @ Id, Vgs45mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1140 pF @ 25 V

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