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NTD24N06G

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NTD24N06G

MOSFET N-CH 60V 24A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD24N06G is a 60V N-Channel Power MOSFET designed for demanding applications. This device features a continuous drain current of 24A at 25°C (Ta) and a low Rds(on) of 42mOhm maximum at 10A, 10V. The NTD24N06G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, enabling efficient thermal management with a maximum power dissipation of 1.36W (Ta) and 62.5W (Tj). Key electrical specifications include a gate charge Qg of 48 nC at 10V and input capacitance Ciss of 1200 pF maximum at 25V. With an operating temperature range of -55°C to 175°C (TJ) and a gate-source voltage limit of ±20V, this MOSFET is suitable for use in automotive, industrial, and power supply sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C24A (Ta)
Rds On (Max) @ Id, Vgs42mOhm @ 10A, 10V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 62.5W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 25 V

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