NTD24N06-1G
MOSFET N-CH 60V 24A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD24N06-1G is an N-Channel Power MOSFET designed for through-hole mounting in an IPAK package. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 24A at 25°C. With a maximum Rds(on) of 42mOhm at 10A and 10V, and a gate charge (Qg) of 48nC at 10V, this MOSFET offers efficient switching characteristics. The input capacitance (Ciss) is rated at 1200pF at 25V. Operating temperature ranges from -55°C to 175°C (TJ). Power dissipation is 1.36W (Ta) and 62.5W (Tj). This device is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta) |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 62.5W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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