NTD23N03RT4G
MOSFET N-CH 25V 3.8A/17.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD23N03RT4G is an N-Channel Power MOSFET designed for efficient power management applications. This device features a Drain-to-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 3.8A at a temperature of 25°C (ambient) and 17.1A at 25°C (case). The on-resistance (Rds On) is a maximum of 45mOhm at 6A and 10V. With a maximum gate charge (Qg) of 3.76 nC at 4.5V and an input capacitance (Ciss) of 225 pF at 20V, it offers optimized switching characteristics. The device supports gate drive voltages from 4V to 5V for its specified Rds On. Thermal performance is supported by a maximum power dissipation of 1.14W (ambient) and 22.3W (case). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (Surface Mount) and supplied on tape and reel, the NTD23N03RT4G is suitable for use in industrial and automotive power switching circuits. It operates within a temperature range of -55°C to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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