NTD23N03RT4
MOSFET N-CH 25V 3.8A/17.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD23N03RT4 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a 25V Drain-Source Voltage (Vdss) and supports continuous drain currents of 3.8A at 25°C ambient and 17.1A at 25°C case temperature. The low on-resistance of 45mOhm at 6A and 10V Vgs makes it suitable for power management in various industries including automotive and industrial automation. Operating across a wide temperature range of -55°C to 150°C, the NTD23N03RT4 utilizes a TO-252-3, DPAK package for surface mount assembly. Key parameters include a gate charge of 3.76 nC at 4.5V Vgs and input capacitance of 225 pF at 20V Vds. Maximum power dissipation is 1.14W (Ta) and 22.3W (Tc).
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
FDP4D5N10C
MOSFET N-CH 100V 128A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
