NTD23N03RG
MOSFET N-CH 25V 3.8A/17.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD23N03RG is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 25 V and offers a continuous drain current capability of 3.8 A at 25°C ambient temperature, scaling to 17.1 A under stabilized case temperature. With a maximum On-Resistance (Rds On) of 45 mOhm at 6 A and 10 V, the NTD23N03RG minimizes conduction losses. The device is housed in a TO-252-3 DPAK package, facilitating surface mounting. Key electrical characteristics include a Gate Charge (Qg) of 3.76 nC (max) at 4.5 V and an input capacitance (Ciss) of 225 pF (max) at 20 V. It operates across a temperature range of -55°C to 150°C. Applications for this component include automotive systems and industrial power control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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