NTD23N03R-1G
MOSFET N-CH 25V 3.8A/17.1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD23N03R-1G is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain current (Id) rating of 3.8 A at 25°C ambient temperature, increasing to 17.1 A under typical case temperature conditions. The On-Resistance (Rds On) is specified at a maximum of 45 mOhm at 6 A and 10 Vgs. Gate drive voltage requirements range from 4V to 5V for optimal performance. Key parameters include a maximum Gate Charge (Qg) of 3.76 nC at 4.5 V and an input capacitance (Ciss) of 225 pF at 20 Vds. It offers a maximum power dissipation of 1.14 W (Ta) and 22.3 W (Tc). The NTD23N03R-1G is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. This device is utilized across various industries including automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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