NTD23N03R-001
MOSFET N-CH 25V 3.8A/17.1A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD23N03R-001 is an N-Channel Power MOSFET designed for general purpose switching applications. This component offers a Drain-to-Source Voltage (Vdss) of 25V and continuous drain current capabilities of 3.8A at ambient temperature (Ta) and 17.1A at case temperature (Tc). Key electrical characteristics include a maximum Rds(on) of 45mOhm at 6A and 10V, with drive voltages specified between 4V and 5V. Input capacitance (Ciss) is rated at a maximum of 225pF at 20V, and gate charge (Qg) is 3.76nC at 4.5V. The device features a maximum gate-source voltage (Vgs) of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. Power dissipation is 1.14W (Ta) and 22.3W (Tc). This MOSFET is packaged in an IPAK (TO-251AA) through-hole configuration. Applications include power management in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |