NTD23N03R
MOSFET N-CH 25V 3.8A/17.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD23N03R is an N-Channel Power MOSFET designed for demanding applications. This device features a 25V drain-source voltage (Vdss) and supports a continuous drain current of 3.8A at ambient temperature (Ta) and 17.1A at case temperature (Tc). The NTD23N03R offers a maximum on-resistance (Rds On) of 45mOhm at 6A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 3.76 nC at 4.5V and an input capacitance (Ciss) of 225 pF at 20V, it is suitable for various switching applications. This MOSFET utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. It is rated for operation across a wide temperature range of -55°C to 150°C (TJ). The NTD23N03R is commonly employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta), 17.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.14W (Ta), 22.3W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 3.76 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 225 pF @ 20 V |
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