NTD20P06L-1G
MOSFET P-CH 60V 15.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20P06L-1G is a P-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 15.5A at 25°C. With a maximum power dissipation of 65W (Tc), it is suitable for high-power switching and control. The Rds(On) is specified at 150mOhm maximum at 7.5A and 5V gate drive voltage. Key parameters include a gate charge (Qg) of 26 nC (Max) @ 5V and input capacitance (Ciss) of 1190 pF (Max) @ 25V. The NTD20P06L-1G utilizes a TO-251-3 Short Leads, IPAK package, facilitating through-hole mounting. This device operates within a temperature range of -55°C to 175°C (TJ). Applications include general purpose power switching and high-efficiency power conversion in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 150mOhm @ 7.5A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 65W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 26 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1190 pF @ 25 V |
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