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NTD20P06L-001

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NTD20P06L-001

MOSFET P-CH 60V 15.5A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD20P06L-001 is a P-Channel Power MOSFET designed for high-efficiency switching applications. This device features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15.5A at 25°C. The on-resistance (Rds On) is specified at a maximum of 150mOhm at 7.5A and 5V gate-source voltage. With a gate charge (Qg) of 26nC at 5V and input capacitance (Ciss) of 1190pF at 25V, it offers optimized switching characteristics. The device is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. It can dissipate up to 65W of power at the case temperature. Operating across a temperature range of -55°C to 175°C, the NTD20P06L-001 is utilized in various industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C15.5A (Ta)
Rds On (Max) @ Id, Vgs150mOhm @ 7.5A, 5V
FET Feature-
Power Dissipation (Max)65W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs26 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds1190 pF @ 25 V

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