NTD20N06LT4
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N06LT4 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C ambient temperature. With a low on-resistance (Rds On) of 48mOhm at 10A and 5V Vgs, it minimizes conduction losses. The NTD20N06LT4 offers a maximum power dissipation of 1.36W at ambient and 60W at junction temperature. Its Gate Charge (Qg) is rated at 32nC maximum at 5V Vgs, and input capacitance (Ciss) is 990pF maximum at 25V Vds.
This MOSFET utilizes a Metal Oxide technology and is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 for surface mounting. The operating temperature range is -55°C to 175°C (TJ). The NTD20N06LT4 is suitable for a range of industries including automotive, industrial power supplies, and motor control. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
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