NTD20N06LG
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD20N06LG is an N-Channel Power MOSFET designed for demanding applications requiring efficient power switching. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current capability of 20A at 25°C ambient. With a maximum on-resistance (Rds On) of 48mOhm at 10A and 5V gate drive, it minimizes conduction losses. The MOSFET is housed in a TO-252-3, DPAK package, facilitating surface mounting. Key electrical parameters include a gate charge (Qg) of 32nC at 5V and input capacitance (Ciss) of 990pF at 25V. The NTD20N06LG operates reliably across a wide temperature range, from -55°C to 175°C (TJ), and offers a maximum power dissipation of 1.36W (Ta) or 60W (Tj). This component is suitable for use in automotive, industrial, and power supply applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3376-TL-W
MOSFET P-CH 20V 1.5A 3MCPH
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
