NTD20N06L-1G
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N06L-1G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a drain-to-source voltage (Vdss) of 60V and a continuous drain current (Id) of 20A at 25°C ambient. Its low on-resistance (Rds(on)) of 48mOhm at 10A and 5V gate-source voltage (Vgs) minimizes conduction losses. The IPAK package (TO-251-3 Short Leads) facilitates through-hole mounting. With a maximum junction temperature of 175°C, the NTD20N06L-1G offers robust thermal performance, dissipating up to 60W at the junction. Key electrical parameters include a gate charge (Qg) of 32nC at 5V Vgs and input capacitance (Ciss) of 990pF at 25V Vds. This MOSFET is suitable for various industrial applications, including power supplies, motor control, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 48mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.36W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 990 pF @ 25 V |
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