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NTD20N06L-001

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NTD20N06L-001

MOSFET N-CH 60V 20A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

onsemi NTD20N06L-001 is an N-Channel Power MOSFET designed for applications requiring efficient switching. This component features a 60 V drain-source voltage and a continuous drain current of 20 A at 25°C. The Rds On is specified at a maximum of 48 mOhm when driven at 10 A and 5 V gate-source voltage. The IPAK package, also known as TO-251-3 Short Leads or TO-251AA, facilitates through-hole mounting. Key electrical characteristics include a gate charge of 32 nC at 5 V and an input capacitance of 990 pF at 25 V. Power dissipation is rated at 1.36 W (ambient) and 60 W (junction). This device operates across a temperature range of -55°C to 175°C (junction). It is suitable for use in various industrial and automotive power management systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C20A (Ta)
Rds On (Max) @ Id, Vgs48mOhm @ 10A, 5V
FET Feature-
Power Dissipation (Max)1.36W (Ta), 60W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds990 pF @ 25 V

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