NTD20N06G
MOSFET N-CH 60V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD20N06G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 20A at 25°C. The NTD20N06G exhibits a low Rds(on) of 46mOhm maximum at 10A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 30 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 1015 pF maximum at 25V Vds. The component is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Maximum power dissipation is rated at 1.88W (Ta) and 60W (Tj). This MOSFET is suitable for use in automotive and industrial power control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.88W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
