NTD20N06-1G
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N06-1G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 20A at 25°C. With a low Rds(on) of 46mOhm at 10A and 10V Vgs, it minimizes conduction losses. The device offers a significant power dissipation capability of 60W at the junction temperature (Tj), with 1.88W at ambient temperature (Ta). Key parameters include a Gate Charge (Qg) of 30 nC and Input Capacitance (Ciss) of 1015 pF at 25V. Operating across a wide temperature range from -55°C to 175°C (Tj), this MOSFET is housed in a TO-251-3 Short Leads, IPAK package for through-hole mounting. Applications span automotive, industrial power control, and power supply designs.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.88W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
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