NTD20N06-001
MOSFET N-CH 60V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD20N06-001 is an N-Channel Power MOSFET designed for robust performance in demanding applications. Featuring a Drain-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 20A at 25°C, this component offers a low on-resistance (Rds On) of 46mOhm at 10A, 10V. The device supports a gate drive voltage up to 10V for optimal Rds On performance and has a maximum Gate-Source Voltage (Vgs) of ±20V. Key capacitances include Input Capacitance (Ciss) of 1015pF at 25V and Gate Charge (Qg) of 30nC at 10V. With a maximum power dissipation of 1.88W (Ta) and 60W (Tj), and an operating temperature range of -55°C to 175°C (TJ), the NTD20N06-001 is suitable for use in automotive, industrial, and power supply sectors. It is supplied in an IPAK package for through-hole mounting.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 10A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.88W (Ta), 60W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1015 pF @ 25 V |
Request a Quote
Clients Also Buy
FCP850N80Z
MOSFET N-CH 800V 8A TO220-3
MCH3476-TL-H
MOSFET N-CH 20V 2A SC70FL/MCPH3
RFD14N05LSM
MOSFET N-CH 50V 14A TO252AA
