NTD20N03L27G
MOSFET N-CH 30V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N03L27G is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain to Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 20A at 25°C (Ta). The low on-resistance, specified as a maximum of 27mOhm at 10A and 5V Vgs, is achieved with a 5V gate drive voltage. The NTD20N03L27G exhibits a maximum Gate Charge (Qg) of 18.9 nC at 10V and an input capacitance (Ciss) of 1260 pF at 25V. With a maximum power dissipation of 1.75W (Ta) and 74W (Tc), this MOSFET is suitable for surface mount applications utilizing the TO-252-3, DPAK (2 Leads + Tab), SC-63 package. It operates across a junction temperature range of -55°C to 150°C. This device finds application in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
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