NTD20N03L27-1G
MOSFET N-CH 30V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N03L27-1G is a high-performance N-Channel Power MOSFET designed for demanding applications. Featuring a 30V Drain-Source Voltage (Vdss) and a continuous drain current capability of 20A (Ta), this component is suitable for power switching and management tasks. Its low on-resistance of 27mOhm at 10A and 5V gate drive voltage ensures efficient operation. The MOSFET utilizes advanced Metal Oxide technology, offering a maximum power dissipation of 1.75W (Ta) or 74W (Tc). Packaged in a TO-251AA (IPAK) through-hole configuration, it is well-suited for industrial automation, automotive systems, and power supply designs. Key electrical parameters include a gate charge of 18.9 nC (max) at 10V and input capacitance of 1260 pF (max) at 25V. The device operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
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