NTD20N03L27-001
MOSFET N-CH 30V 20A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N03L27-001 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vdss) and a continuous drain current rating of 20A (Ta) at 25°C. With a low on-resistance (Rds On) of 27mOhm at 10A and 5V gate-source voltage, it minimizes conduction losses. The maximum gate charge (Qg) is 18.9 nC at 10V, and the input capacitance (Ciss) is 1260 pF at 25V. This MOSFET utilizes MOSFET technology and is housed in a TO-251-3 Short Leads, IPAK package for through-hole mounting. It offers a power dissipation capability of 1.75W (Ta) and 74W (Tc), with an operating temperature range of -55°C to 150°C. The NTD20N03L27-001 is suitable for power management and switching applications across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
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