NTD20N03L27
MOSFET N-CH 30V 20A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD20N03L27 is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage (Vds) and a continuous drain current (Id) rating of 20A at 25°C ambient temperature, with a significantly higher 74W power dissipation capability under optimal thermal conditions (Tc). Its low on-resistance (Rds On) of 27mOhm at 10A and 5V gate-source voltage (Vgs) ensures efficient power delivery. The NTD20N03L27 utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. Key electrical characteristics include a maximum gate charge (Qg) of 18.9 nC at 10V and a maximum input capacitance (Ciss) of 1260 pF at 25V. Operating temperature range is from -55°C to 150°C. This component is frequently employed in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
| Rds On (Max) @ Id, Vgs | 27mOhm @ 10A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 1.75W (Ta), 74W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 18.9 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1260 pF @ 25 V |
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