NTD18N06LT4
MOSFET N-CH 60V 18A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD18N06LT4 is an N-Channel MOSFET designed for demanding applications. This component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C. With a low on-resistance of 65mOhm at 9A and 5V Vgs, it offers efficient power handling. The device supports a gate-source voltage (Vgs) range of ±15V and a threshold voltage (Vgs(th)) of 2V at 250µA. Key electrical parameters include a gate charge (Qg) of 22nC at 5V and an input capacitance (Ciss) of 675pF at 25V. The NTD18N06LT4 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied on tape and reel. It offers significant power dissipation capabilities with 2.1W (Ta) and 55W (Tj). This MOSFET is utilized across various industries including automotive and industrial power control.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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