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NTD18N06LG

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NTD18N06LG

MOSFET N-CH 60V 18A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD18N06LG is an N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 18 A at 25°C (Ta). With a low on-resistance (Rds On) of 65 mOhm at 9 A and 5 Vgs, it minimizes conduction losses. The NTD18N06LG offers a gate charge (Qg) of 22 nC at 5 V and an input capacitance (Ciss) of 675 pF at 25 V. Its maximum power dissipation is rated at 2.1 W (Ta) and 55 W (Tj), operating across a temperature range of -55°C to 175°C. Packaged in a TO-252-3, DPAK, this surface mount component is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C18A (Ta)
Rds On (Max) @ Id, Vgs65mOhm @ 9A, 5V
FET Feature-
Power Dissipation (Max)2.1W (Ta), 55W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds675 pF @ 25 V

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