NTD18N06L-1G
MOSFET N-CH 60V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD18N06L-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 60 V and a continuous drain current (Id) of 18 A at 25°C (Ta). The low on-resistance, specified as 65 mOhm maximum at 9 A and 5 V, combined with a Vgs(th) of 2V at 250µA, ensures efficient switching. The device has a maximum gate charge (Qg) of 22 nC at 5 V and an input capacitance (Ciss) of 675 pF at 25 V. With a maximum power dissipation of 2.1 W (Ta) and 55 W (Tj), and an operating temperature range from -55°C to 175°C (TJ), it is suitable for automotive and industrial power management systems. The IPAK package (TO-251-3 Short Leads, TO-251AA) facilitates robust mounting.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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