NTD18N06L-001
MOSFET N-CH 60V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD18N06L-001 is an N-Channel Power MOSFET designed for efficient switching applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 18A at 25°C ambient. With a low on-resistance (Rds On) of 65mOhm maximum at 9A and 5V gate drive, it minimizes conduction losses. The IPAK package provides a robust thermal path with a maximum power dissipation of 2.1W (Ta) and 55W (Tj). Key electrical parameters include a gate charge (Qg) of 22 nC maximum at 5V and input capacitance (Ciss) of 675 pF maximum at 25V. This device is suitable for use in industrial, automotive, and power supply applications requiring reliable power switching. It is supplied in a Tube package.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 9A, 5V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 5V |
| Vgs (Max) | ±15V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 675 pF @ 25 V |
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