NTD18N06G
MOSFET N-CH 60V 18A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD18N06G is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 18A at 25°C. With a low on-resistance (Rds On) of 60mOhm at 9A and 10V Vgs, it minimizes conduction losses. The NTD18N06G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for high-density circuit designs. Its maximum power dissipation is rated at 2.1W (Ta) and 55W (Tj), with an operating junction temperature range of -55°C to 175°C. Key electrical characteristics include a Gate Charge (Qg) of 30 nC at 10V and an input capacitance (Ciss) of 710 pF at 25V. This component finds application in power switching and motor control systems within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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