NTD18N06-1G
MOSFET N-CH 60V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD18N06-1G is an N-Channel Power MOSFET designed for robust performance in demanding applications. This through-hole component features a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 18A at 25°C ambient. The device exhibits a maximum Rds(On) of 60mOhm at 9A and 10V gate-source voltage, with a low gate charge (Qg) of 30 nC at 10V. It offers a power dissipation capability of 2.1W (Ta) and 55W (Tj) and operates across a broad temperature range from -55°C to 175°C. The IPAK (TO-251-3 Short Leads) package provides efficient thermal management. This MOSFET is suitable for use in industrial automation, power supplies, and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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