NTD18N06-001
MOSFET N-CH 60V 18A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi NTD18N06-001 is a 60V N-Channel Power MOSFET designed for through-hole mounting in an IPAK (TO-251) package. This device features a continuous drain current capability of 18A at 25°C ambient temperature and a low on-resistance of 60mOhm maximum at 9A and 10V Vgs. The NTD18N06-001 offers a gate charge of 30 nC at 10V, with a maximum gate-source voltage of ±20V and a threshold voltage of 4V at 250µA. Power dissipation is rated at 2.1W ambient and 55W junction. It operates across a temperature range of -55°C to 175°C. This component is suitable for applications in industrial and automotive sectors requiring efficient power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 18A (Ta) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.1W (Ta), 55W (Tj) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 710 pF @ 25 V |
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