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NTD15N06L-001

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NTD15N06L-001

MOSFET N-CH 60V 15A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD15N06L-001 is an N-Channel MOSFET designed for robust power switching applications. This device features a drain-source voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C. With a maximum on-resistance (Rds On) of 100mOhm at 7.5A and 5V gate-source voltage, it offers efficient power transfer. The NTD15N06L-001 utilizes Metal Oxide technology and is housed in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. Key parameters include a gate charge (Qg) of 20 nC at 5V and input capacitance (Ciss) of 440 pF at 25V. This component is rated for a junction temperature range of -55°C to 175°C and offers power dissipation of 1.5W (ambient) and 48W (junction). It finds application in various industrial sectors requiring reliable power management.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs100mOhm @ 7.5A, 5V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)5V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds440 pF @ 25 V

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