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NTD15N06-001

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NTD15N06-001

MOSFET N-CH 60V 15A IPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD15N06-001 is an N-Channel power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 15A at 25°C. With a maximum Rds(On) of 90mOhm at 7.5A and 10V gate drive, it offers efficient power handling. The device exhibits a total gate charge (Qg) of 20 nC at 10V and input capacitance (Ciss) of 450 pF at 25V. It is available in a TO-251-3 Short Leads, IPAK package, suitable for through-hole mounting. The NTD15N06-001 operates across a temperature range of -55°C to 175°C (Tj) and supports a maximum gate-source voltage (Vgs) of ±20V. This MOSFET is utilized in industries such as industrial power control and automotive systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-251-3 Short Leads, IPAK, TO-251AA
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C15A (Ta)
Rds On (Max) @ Id, Vgs90mOhm @ 7.5A, 10V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 48W (Tj)
Vgs(th) (Max) @ Id4V @ 250µA
Supplier Device PackageIPAK
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds450 pF @ 25 V

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