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NTD14N03RG

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NTD14N03RG

MOSFET N-CH 25V 2.5A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD14N03RG is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain current (Id) of 2.5 A at 25°C ambient. It offers a maximum On-Resistance (Rds On) of 95 mOhm at 5 A and 10 V Vgs. The NTD14N03RG is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, facilitating efficient thermal management with a power dissipation of 1.04 W (Ta) and 20.8 W (Tc). Key parameters include a Gate Charge (Qg) of 1.8 nC at 5 V and Input Capacitance (Ciss) of 115 pF at 20 V. The operating junction temperature range is -55°C to 150°C. This component is suitable for use in automotive and industrial power management systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds115 pF @ 20 V

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