NTD14N03R-001
MOSFET N-CH 25V 2.5A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD14N03R-001 is an N-Channel Power MOSFET designed for through-hole mounting in an IPAK package (TO-251-3 Short Leads, IPAK, TO-251AA). This device features a Drain-Source Voltage (Vdss) of 25V and a continuous drain current (Id) of 2.5A at 25°C ambient. With a maximum Rds(On) of 95mOhm at 5A and 10V, it offers efficient switching performance. The gate drive voltage range is from 4.5V to 10V, with a maximum gate charge (Qg) of 1.8 nC at 5V. Input capacitance (Ciss) is rated at a maximum of 115 pF at 20V. The NTD14N03R-001 supports a maximum gate-source voltage (Vgs) of ±20V and operates within an ambient temperature range of -55°C to 150°C. Power dissipation is 1.04W (Ta) and 20.8W (Tc). This component is commonly utilized in automotive and industrial applications requiring robust power switching.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Ta) |
| Rds On (Max) @ Id, Vgs | 95mOhm @ 5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.04W (Ta), 20.8W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 1.8 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 20 V |
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