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NTD14N03R

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NTD14N03R

MOSFET N-CH 25V 2.5A DPAK

Manufacturer: onsemi

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The onsemi NTD14N03R is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-to-Source Voltage (Vdss) of 25 V and a continuous Drain Current (Id) of 2.5 A at 25°C ambient temperature. The Rds On is specified at a maximum of 95 mOhm at 5 A and 10 V Vgs. Key parameters include a Gate Charge (Qg) of 1.8 nC (max) at 5 V and an Input Capacitance (Ciss) of 115 pF (max) at 20 V. The NTD14N03R supports a gate drive voltage range from 4.5 V to 10 V, with a maximum Vgs of ±20V. Power dissipation is rated at 1.04 W (Ta) and 20.8 W (Tc). This MOSFET is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for high-density board designs. Its operating temperature range is -55°C to 150°C (TJ). The onsemi NTD14N03R finds application in power management, consumer electronics, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Rds On (Max) @ Id, Vgs95mOhm @ 5A, 10V
FET Feature-
Power Dissipation (Max)1.04W (Ta), 20.8W (Tc)
Vgs(th) (Max) @ Id2V @ 250µA
Supplier Device PackageDPAK
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)25 V
Gate Charge (Qg) (Max) @ Vgs1.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds115 pF @ 20 V

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