NTD12N10T4G
MOSFET N-CH 100V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD12N10T4G is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 100 V and a continuous drain current (Id) of 12 A at 25°C (Ta). With a maximum on-resistance (Rds On) of 165 mOhm at 6 A and 10 V, it offers efficient switching characteristics. The NTD12N10T4G has a low gate charge (Qg) of 20 nC at 10 V and an input capacitance (Ciss) of 550 pF at 25 V. Power dissipation is rated at 1.28 W (Ta) and 56.6 W (Tc). This MOSFET utilizes Metal Oxide technology and is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package. It is suitable for use in automotive and industrial power management systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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