NTD12N10G
MOSFET N-CH 100V 12A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi NTD12N10G is an N-Channel Power MOSFET designed for demanding applications. This component features a 100V drain-source breakdown voltage and a continuous drain current capability of 12A at 25°C (Ta). With a low on-resistance of 165mOhm maximum at 6A and 10V Vgs, it exhibits efficient conduction characteristics. The NTD12N10G offers a gate charge of 20 nC at 10V and an input capacitance (Ciss) of 550 pF at 25V, facilitating optimized switching performance. Its TO-252-3, DPAK (2 Leads + Tab), SC-63 package is suitable for surface mounting and supports a maximum power dissipation of 1.28W (Ta) or 56.6W (Tc). Operating temperature range is from -55°C to 175°C (TJ). This device is commonly found in power supply units, automotive systems, and industrial motor control.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
Request a Quote
Clients Also Buy
SMP3003-DL-1EX
MOSFET P-CH 75V 100A SMP-FD
FDMC86324
MOSFET N-CH 80V 7A/20A POWER33
NVTFS6H854NTAG
MOSFET N-CH 80V 9.5A/44A 8WDFN
