NTD12N10-1G
MOSFET N-CH 100V 12A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD12N10-1G is an N-Channel Power MOSFET designed for demanding applications. This through-hole component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 12 A at 25°C. Its low on-resistance of 165 mOhm at 6 A and 10 V gate drive ensures efficient power transfer. The device exhibits a gate charge (Qg) of 20 nC and input capacitance (Ciss) of 550 pF, facilitating fast switching characteristics. With a maximum power dissipation of 1.28 W (Ta) and 56.6 W (Tc), it is suitable for applications requiring robust thermal performance. The IPAK package (TO-251-3 Short Leads) simplifies integration into power management circuits. This component finds application in various industrial and automotive systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
| Rds On (Max) @ Id, Vgs | 165mOhm @ 6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.28W (Ta), 56.6W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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