NTD110N02RT4G
MOSFET N-CH 24V 12.5A/110A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD110N02RT4G is an N-Channel Power MOSFET designed for efficient power switching applications. This device offers a Drain-Source Voltage (Vdss) of 24V and a continuous Drain Current (Id) of 12.5A at ambient temperature (Ta) and 110A at case temperature (Tc). The low on-resistance of 4.6mOhm at 20A and 10V (Vgs) ensures minimal conduction losses. Featuring a 28 nC gate charge at 4.5V, it facilitates rapid switching performance. The NTD110N02RT4G is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, suitable for automated assembly. With a maximum power dissipation of 1.5W (Ta) and 110W (Tc), and an operating temperature range of -55°C to 175°C, this MOSFET is well-suited for automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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