NTD110N02RT4
MOSFET N-CH 24V 12.5A/110A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi NTD110N02RT4 is an N-Channel Power MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 24V and offers a continuous drain current (Id) of 12.5A at 25°C ambient temperature, scaling to 110A at 25°C case temperature. The low on-resistance (Rds On) is specified at a maximum of 4.6mOhm at 20A and 10V gate drive. With a maximum gate charge (Qg) of 28 nC at 4.5V and input capacitance (Ciss) of 3440 pF, this MOSFET is suitable for efficient switching. Power dissipation is rated at 1.5W ambient and 110W case. The NTD110N02RT4 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mounting. Its operating temperature range is -55°C to 175°C (TJ). This component finds application in various industrial sectors including automotive and power supply designs.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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