NTD110N02RG
MOSFET N-CH 24V 12.5A/110A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD110N02RG is an N-Channel MOSFET designed for demanding applications. This device features a 24 V drain-to-source voltage (Vdss) and offers a continuous drain current capability of 12.5 A at ambient temperature (Ta) and 110 A at case temperature (Tc). With a low on-resistance (Rds On) of 4.6 mOhm maximum at 20 A and 10 V, it minimizes conduction losses. The TO-252-3, DPAK package facilitates surface mounting, suitable for power management in automotive and industrial automation systems. Key electrical characteristics include a Vgs(th) of 2 V maximum at 250 µA, a gate charge (Qg) of 28 nC maximum at 4.5 V, and input capacitance (Ciss) of 3440 pF maximum at 20 V. It operates within an extended temperature range of -55°C to 175°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | DPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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