NTD110N02R-001G
MOSFET N-CH 24V 12.5A/110A IPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi NTD110N02R-001G is an N-Channel Power MOSFET designed for demanding applications. This component features a 24V drain-source breakdown voltage and offers a continuous drain current of 12.5A at 25°C ambient and 110A at 25°C case temperature. With a low on-resistance of 4.6 mOhm at 20A and 10V Vgs, it ensures efficient power delivery. The MOSFET supports gate drive voltages from 4.5V to 10V, and its gate charge is rated at 28 nC maximum at 4.5V. The input capacitance (Ciss) is a maximum of 3440 pF at 20V. This through-hole device, packaged in an IPAK (TO-251-3 Short Leads, TO-251AA), dissipates up to 1.5W (Ta) or 110W (Tc). Its operating temperature range is -55°C to 175°C. This component is suitable for automotive and industrial power switching applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-251-3 Short Leads, IPAK, TO-251AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta), 110A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.6mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1.5W (Ta), 110W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | IPAK |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 24 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3440 pF @ 20 V |
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